Analysis And Design Of Analog Integrated Circuits

Description

By (author) Gray Paul R.; By (author) Hurst Paul J.; By (author) Lewis Stephen H.; By (author) Meyer Robert G.

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ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS

Authoritative and comprehensive textbook on the fundamentals of analog integrated circuits, with learning aids included throughout

Written in an accessible style to ensure complex content can be appreciated by both students and professionals, this Sixth Edition of Analysis and Design of Analog Integrated Circuits is a highly comprehensive textbook on analog design, offering in-depth coverage of the fundamentals of circuits in a single volume. To aid in reader comprehension and retention, supplementary material includes end of chapter problems, plus a Solution Manual for instructors.

In addition to the well-established concepts, this Sixth Edition introduces a new super-source follower circuit and its large-signal behavior, frequency response, stability, and noise properties. New material also introduces replica biasing, describes and analyzes two op amps with replica biasing, and provides coverage of weighted zero-value time constants as a method to estimate the location of dominant zeros, pole-zero doublets (including their effect on settling time and three examples of circuits that create doublets), the effect of feedback on pole-zero doublets, and MOS transistor noise performance (including a thorough treatment on thermally induced gate noise).

Providing complete coverage of the subject, Analysis and Design of Analog Integrated Circuits serves as a valuable reference for readers from many different types of backgrounds, including senior undergraduates and first-year graduate students in electrical and computer engineering, along with analog integrated-circuit designers.

Table of contents:

Chapter 1 Models for Integrated-Circuit Active Devices 1

1.1 Introduction 1

1.2 Depletion Region of a pn Junction 1

1.2.1 Depletion-Region Capacitance 5

1.2.2 Junction Breakdown 7

1.3 Large-Signal Behavior of Bipolar Transistors 9

1.3.1 Large-Signal Models in the Forward-Active Region 9

1.3.2 Effects of Collector Voltage on Large-Signal Characteristics in the Forward-Active Region 14

1.3.3 Saturation and Inverse-Active Regions 16

1.3.4 Transistor Breakdown Voltages 21

1.3.5 Dependence of Transistor Current Gain β F on Operating Conditions 24

1.4 Small-Signal Models of Bipolar Transistors 26

1.4.1 Transconductance 26

1.4.2 Base-Charging Capacitance 28

1.4.3 Input Resistance 29

1.4.4 Output Resistance 30

1.4.5 Basic Small-Signal Model of the Bipolar Transistor 30

1.4.6 Collector-Base Resistance 31

1.4.7 Parasitic Elements in the Small-Signal Model 31

1.4.8 Specification of Transistor Frequency Response 35

1.5 Large-Signal Behavior of Metal-Oxide-Semiconductor Field-Effect Transistors 39

1.5.1 Transfer Characteristics of MOS Devices 39

1.5.2 Comparison of Operating Regions of Bipolar and MOS Transistors 46

1.5.3 Decomposition of Gate-Source Voltage 48

1.5.4 Threshold Temperature Dependence 48

1.5.5 MOS Device Voltage Limitations 49

1.6 Small-Signal Models of MOS Transistors 50

1.6.1 Transconductance 51

1.6.2 Intrinsic Gate-Source and Gate-Drain Capacitance 52

1.6.3 Input Resistance 53

1.6.4 Output Resistance 53

1.6.5 Basic Small-Signal Model of the MOS Transistor 53

1.6.6 Body Transconductance 54

1.6.7 Parasitic Elements in the Small-Signal Model 55

1.6.8 MOS Transistor Frequency Response 57

1.7 Short-Channel Effects in MOS Transistors 60

1.7.1 Velocity Saturation from the Horizontal Field 60

1.7.2 Transconductance and Transition Frequency 64

1.7.3 Mobility Degradation from the Vertical Field 66

1.8 Weak Inv